Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7652
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dc.contributor.authorKumar, Sunilen_US
dc.contributor.authorSen, Somadityaen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:12:22Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:12:22Z-
dc.date.issued2017-
dc.identifier.citationSrivastava, T., Bajpai, G., Tiwari, N., Bhattacharya, D., Jha, S. N., Kumar, S., . . . Sen, S. (2017). Opto-electronic properties of zn(1-x)VxO: Green emission enhancement due to V4+ state. Journal of Applied Physics, 122(2) doi:10.1063/1.4992087en_US
dc.identifier.issn0021-8979-
dc.identifier.otherEID(2-s2.0-85023760373)-
dc.identifier.urihttps://doi.org/10.1063/1.4992087-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/7652-
dc.description.abstractVanadium incorporation in ZnO modifies the lattice structure. The valence state of V plays an important role, controlling the oxygen content and thereby dimensions of the lattice. Both V4+ and V5+ are more electropositive than Zn2+ and reduce oxygen vacancies, resulting in lattice expansion. However, the sizes of both V4+ and V5+ are smaller than Zn2+, thereby resulting in the lattice contraction. The internal competition of increasing oxygen content and reducing effective crystal radius decides the lattice expansion and contraction. This affects the lattice strain and changes electronic levels, which modify absorption and emission processes in between the valence and conduction bands. A strong green emission band not due to oxygen vacancy but due to defects contributed by vanadium is also dependent on the oxidation state of vanadium. Bandgap also increases with the increase in the V4+ content. © 2017 Author(s).en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.sourceJournal of Applied Physicsen_US
dc.subjectElectronic propertiesen_US
dc.subjectOxygenen_US
dc.subjectVacanciesen_US
dc.subjectVanadiumen_US
dc.subjectZincen_US
dc.subjectAbsorption and emissionsen_US
dc.subjectElectronic levelsen_US
dc.subjectGreen emission bandsen_US
dc.subjectLattice contractionen_US
dc.subjectLattice expansionen_US
dc.subjectLattice structuresen_US
dc.subjectOptoelectronic propertiesen_US
dc.subjectVanadium incorporationen_US
dc.subjectOxygen vacanciesen_US
dc.titleOpto-electronic properties of Zn(1-x)VxO: Green emission enhancement due to V4+ stateen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Metallurgical Engineering and Materials Sciences

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