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Title: | Opto-electronic properties of Zn(1-x)VxO: Green emission enhancement due to V4+ state |
Authors: | Kumar, Sunil Sen, Somaditya |
Keywords: | Electronic properties;Oxygen;Vacancies;Vanadium;Zinc;Absorption and emissions;Electronic levels;Green emission bands;Lattice contraction;Lattice expansion;Lattice structures;Optoelectronic properties;Vanadium incorporation;Oxygen vacancies |
Issue Date: | 2017 |
Publisher: | American Institute of Physics Inc. |
Citation: | Srivastava, T., Bajpai, G., Tiwari, N., Bhattacharya, D., Jha, S. N., Kumar, S., . . . Sen, S. (2017). Opto-electronic properties of zn(1-x)VxO: Green emission enhancement due to V4+ state. Journal of Applied Physics, 122(2) doi:10.1063/1.4992087 |
Abstract: | Vanadium incorporation in ZnO modifies the lattice structure. The valence state of V plays an important role, controlling the oxygen content and thereby dimensions of the lattice. Both V4+ and V5+ are more electropositive than Zn2+ and reduce oxygen vacancies, resulting in lattice expansion. However, the sizes of both V4+ and V5+ are smaller than Zn2+, thereby resulting in the lattice contraction. The internal competition of increasing oxygen content and reducing effective crystal radius decides the lattice expansion and contraction. This affects the lattice strain and changes electronic levels, which modify absorption and emission processes in between the valence and conduction bands. A strong green emission band not due to oxygen vacancy but due to defects contributed by vanadium is also dependent on the oxidation state of vanadium. Bandgap also increases with the increase in the V4+ content. © 2017 Author(s). |
URI: | https://doi.org/10.1063/1.4992087 https://dspace.iiti.ac.in/handle/123456789/7652 |
ISSN: | 0021-8979 |
Type of Material: | Journal Article |
Appears in Collections: | Department of Metallurgical Engineering and Materials Sciences |
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