Effect of hafnium substitution on the dielectric properties of CaCu 3 Ti 4 O 12

Abstract

CaCu 3 Ti 4-x Hf x O 12 (x = 0, 0.04, 0.08 and 0.12 i.e. 0, 1, 2 and 3 atomic %) has been prepared by conventional solid state reaction method. The structural, dielectric and optical properties of the prepared samples were studied using x-ray diffraction, impedance analyzer and diffuse reflectance spectroscopy. With increasing Hf concentration dielectric permittivity decreases whereas the dielectric loss slightly increases and optical band gap almost remain constant. The results are explained on the basis of increase in the structural disorder and porosity of the sample with Hf doping. © 2015 AIP Publishing LLC.