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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mulchandani, Komal | en_US |
dc.contributor.author | Soni, Ankit | en_US |
dc.contributor.author | Pathy, Komal | en_US |
dc.contributor.author | Mavani, Krushna R. | en_US |
dc.date.accessioned | 2022-03-17T01:00:00Z | - |
dc.date.accessioned | 2022-03-21T11:14:10Z | - |
dc.date.available | 2022-03-17T01:00:00Z | - |
dc.date.available | 2022-03-21T11:14:10Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Mulchandani, K., Soni, A., Pathy, K., & Mavani, K. R. (2021). Rapid hydrogenation of VO2 thin films via metal-acid contact method using mild electric fields at room temperature. Materials Letters, 295 doi:10.1016/j.matlet.2021.129786 | en_US |
dc.identifier.issn | 0167-577X | - |
dc.identifier.other | EID(2-s2.0-85104420692) | - |
dc.identifier.uri | https://doi.org/10.1016/j.matlet.2021.129786 | - |
dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/7854 | - |
dc.description.abstract | Five thin films of VO2 were grown on single-crystal sapphire substrates in identical deposition conditions using pulsed excimer laser with an objective to study hydrogenation under different electric fields at room temperature. For hydrogenation, a self-made steup was used with the provision of the negative (film) and positive electrodes in acidic solution. The microstructural, crystallographic and electrical properties were studied in detail. By applying only a trivial voltage of 0.001 mV at 3 cm distance for hydrogenation just for 30 s, the resistivity of the film decreased by one order of magnitude at room temperature, indicating incorporation of a good amount of hydrogen in VO2. We find that the hydrogenation is not only sustainable and reversible but a lot more rapid as compared to other techniques. © 2021 Elsevier B.V. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier B.V. | en_US |
dc.source | Materials Letters | en_US |
dc.subject | Electric fields | en_US |
dc.subject | Excimer lasers | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | Pulsed lasers | en_US |
dc.subject | Sapphire | en_US |
dc.subject | Single crystals | en_US |
dc.subject | Thin films | en_US |
dc.subject | Vanadium dioxide | en_US |
dc.subject | Contact methods | en_US |
dc.subject | Deposition conditions | en_US |
dc.subject | Property | en_US |
dc.subject | Pulsed excimer lasers | en_US |
dc.subject | Pulsed-laser deposition | en_US |
dc.subject | Raman | en_US |
dc.subject | Sapphire substrates | en_US |
dc.subject | Single crystal sapphires | en_US |
dc.subject | Thin-films | en_US |
dc.subject | VO$-2$/ thin films | en_US |
dc.subject | Hydrogenation | en_US |
dc.title | Rapid hydrogenation of VO2 thin films via metal-acid contact method using mild electric fields at room temperature | en_US |
dc.type | Journal Article | en_US |
Appears in Collections: | Department of Physics |
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