Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7854
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dc.contributor.authorMulchandani, Komalen_US
dc.contributor.authorSoni, Ankiten_US
dc.contributor.authorPathy, Komalen_US
dc.contributor.authorMavani, Krushna R.en_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:14:10Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:14:10Z-
dc.date.issued2021-
dc.identifier.citationMulchandani, K., Soni, A., Pathy, K., & Mavani, K. R. (2021). Rapid hydrogenation of VO2 thin films via metal-acid contact method using mild electric fields at room temperature. Materials Letters, 295 doi:10.1016/j.matlet.2021.129786en_US
dc.identifier.issn0167-577X-
dc.identifier.otherEID(2-s2.0-85104420692)-
dc.identifier.urihttps://doi.org/10.1016/j.matlet.2021.129786-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/7854-
dc.description.abstractFive thin films of VO2 were grown on single-crystal sapphire substrates in identical deposition conditions using pulsed excimer laser with an objective to study hydrogenation under different electric fields at room temperature. For hydrogenation, a self-made steup was used with the provision of the negative (film) and positive electrodes in acidic solution. The microstructural, crystallographic and electrical properties were studied in detail. By applying only a trivial voltage of 0.001 mV at 3 cm distance for hydrogenation just for 30 s, the resistivity of the film decreased by one order of magnitude at room temperature, indicating incorporation of a good amount of hydrogen in VO2. We find that the hydrogenation is not only sustainable and reversible but a lot more rapid as compared to other techniques. © 2021 Elsevier B.V.en_US
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.sourceMaterials Lettersen_US
dc.subjectElectric fieldsen_US
dc.subjectExcimer lasersen_US
dc.subjectPulsed laser depositionen_US
dc.subjectPulsed lasersen_US
dc.subjectSapphireen_US
dc.subjectSingle crystalsen_US
dc.subjectThin filmsen_US
dc.subjectVanadium dioxideen_US
dc.subjectContact methodsen_US
dc.subjectDeposition conditionsen_US
dc.subjectPropertyen_US
dc.subjectPulsed excimer lasersen_US
dc.subjectPulsed-laser depositionen_US
dc.subjectRamanen_US
dc.subjectSapphire substratesen_US
dc.subjectSingle crystal sapphiresen_US
dc.subjectThin-filmsen_US
dc.subjectVO$-2$/ thin filmsen_US
dc.subjectHydrogenationen_US
dc.titleRapid hydrogenation of VO2 thin films via metal-acid contact method using mild electric fields at room temperatureen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Physics

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