Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7854
Title: Rapid hydrogenation of VO2 thin films via metal-acid contact method using mild electric fields at room temperature
Authors: Mulchandani, Komal
Soni, Ankit
Pathy, Komal
Mavani, Krushna R.
Keywords: Electric fields;Excimer lasers;Pulsed laser deposition;Pulsed lasers;Sapphire;Single crystals;Thin films;Vanadium dioxide;Contact methods;Deposition conditions;Property;Pulsed excimer lasers;Pulsed-laser deposition;Raman;Sapphire substrates;Single crystal sapphires;Thin-films;VO$-2$/ thin films;Hydrogenation
Issue Date: 2021
Publisher: Elsevier B.V.
Citation: Mulchandani, K., Soni, A., Pathy, K., & Mavani, K. R. (2021). Rapid hydrogenation of VO2 thin films via metal-acid contact method using mild electric fields at room temperature. Materials Letters, 295 doi:10.1016/j.matlet.2021.129786
Abstract: Five thin films of VO2 were grown on single-crystal sapphire substrates in identical deposition conditions using pulsed excimer laser with an objective to study hydrogenation under different electric fields at room temperature. For hydrogenation, a self-made steup was used with the provision of the negative (film) and positive electrodes in acidic solution. The microstructural, crystallographic and electrical properties were studied in detail. By applying only a trivial voltage of 0.001 mV at 3 cm distance for hydrogenation just for 30 s, the resistivity of the film decreased by one order of magnitude at room temperature, indicating incorporation of a good amount of hydrogen in VO2. We find that the hydrogenation is not only sustainable and reversible but a lot more rapid as compared to other techniques. © 2021 Elsevier B.V.
URI: https://doi.org/10.1016/j.matlet.2021.129786
https://dspace.iiti.ac.in/handle/123456789/7854
ISSN: 0167-577X
Type of Material: Journal Article
Appears in Collections:Department of Physics

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