Luminescence Study of Stressed Si Nanoclusters in the Vicinity of Cu Nanoparticles

Abstract

Stressed Si nanoclusters (NCs) are synthesized using two-stage metal ion implantation technique. XRD and Raman scattering measurements confirm the presence of NCs in the system. Luminescence study of stressed Si NCs has been done over a wide temperature range of 6 to 300 K. With increase in temperature narrow peaks observed at low temperature merging to a single broad PL. A detail analysis of these observed PL peaks at low temperature has been reported here. Contrary to other metal, presence of Cu does not enhance the luminescence as coming from Si NCs. A possible explanation of not observing PL at room temperature has been given. Nature and magnitude of stress is also calculated using Raman scattering method. © 2018, Springer Nature B.V.