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https://dspace.iiti.ac.in/handle/123456789/8250
| Title: | Zn1−xSixO: Reduced photosensitivity, improved stability and enhanced conductivity |
| Authors: | Sen, Somaditya |
| Keywords: | Carrier concentration;Convergence of numerical methods;Display devices;Electric conductivity;II-VI semiconductors;Light;Sol-gel process;Sol-gels;Surface defects;Transparent electrodes;Appropriate materials;Deep level trap;Electronic device;Enhanced conductivity;Photo-stability;Sensitivity;Surface conductivity;UV and visible light;Image enhancement |
| Issue Date: | 2018 |
| Publisher: | Acta Materialia Inc |
| Citation: | Srivastava, T., Bajpai, G., Liu, S. W., Biring, S., & Sen, S. (2018). Zn1−xSixO: Reduced photosensitivity, improved stability and enhanced conductivity. Scripta Materialia, 150, 42-44. doi:10.1016/j.scriptamat.2018.02.038 |
| Abstract: | Effect of different wavelengths (350, 380, 390, 400, 450, 550 & 650 nm) of light on surface conductivity of sol-gel synthesized Zn1−xSixO material has been observed. Enhancement in conductivity at all wavelengths of light had been attributed to enhanced charge carrier concentration with silicon doping. Reduction in sensitivity for UV and visible light wavelength indicates reduction of surface defects and deep level traps with Si4+ incorporation. Enhanced photo stability with Si4+ doping makes it an appropriate material for transparent electrodes used in various display and electronic devices. © 2018 Elsevier Ltd |
| URI: | https://doi.org/10.1016/j.scriptamat.2018.02.038 https://dspace.iiti.ac.in/handle/123456789/8250 |
| ISSN: | 1359-6462 |
| Type of Material: | Journal Article |
| Appears in Collections: | Department of Physics |
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