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| Title: | Vanadium substitution: A simple and economic way to improve UV sensing in ZnO |
| Authors: | Sen, Somaditya |
| Keywords: | Gas adsorption;II-VI semiconductors;Vanadium;De-trapping;Defect state;Oxygen adsorption;UV sensitivity;Vanadium doping;Vanadium substitution;Visible light;ZnO surface;Zinc oxide |
| Issue Date: | 2018 |
| Publisher: | American Institute of Physics Inc. |
| Citation: | Srivastava, T., Bajpai, G., Rathore, G., Liu, S. W., Biring, S., & Sen, S. (2018). Vanadium substitution: A simple and economic way to improve UV sensing in ZnO. Journal of Applied Physics, 123(16) doi:10.1063/1.5012877 |
| Abstract: | The UV sensing in pure ZnO is due to oxygen adsorption/desorption process from the ZnO surface. Vanadium doping improves the UV sensitivity of ZnO. The enhancement in UV sensitivity in vanadium-substituted ZnO is attributed to trapping and de-trapping of electrons at V4+ and V5+-related defect states. The V4+ state has an extra electron than the V5+ state. A V4+ to V5+ transformation happens with excitation of this electron to the conduction band, while a reverse trapping process liberates a visible light. An analytic study of response phenomenon reveals this trapping and de-trapping process. © 2018 Author(s). |
| URI: | https://doi.org/10.1063/1.5012877 https://dspace.iiti.ac.in/handle/123456789/8258 |
| ISSN: | 0021-8979 |
| Type of Material: | Journal Article |
| Appears in Collections: | Department of Physics |
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