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https://dspace.iiti.ac.in/handle/123456789/8351
Title: | Spectral Anomaly in Raman Scattering from p-Type Silicon Nanowires |
Authors: | Roy, Swarup Sagdeo, Pankaj R. Kumar, Rajesh |
Keywords: | Doppler effect;Electron-phonon interactions;Nanowires;Phonons;Quantum electronics;Quantum theory;Raman scattering;Asymmetric broadening;Etching technique;Quantum confinement effects;Raman line shapes;Relative contribution;Silicon nanowires;Spectral anomalies;Theoretical framework;Silicon wafers |
Issue Date: | 2017 |
Publisher: | American Chemical Society |
Citation: | Yogi, P., Poonia, D., Mishra, S., Saxena, S. K., Roy, S., Kumar, V., . . . Kumar, R. (2017). Spectral anomaly in raman scattering from p-type silicon nanowires. Journal of Physical Chemistry C, 121(9), 5372-5378. doi:10.1021/acs.jpcc.6b12811 |
Abstract: | An anomalous nature of Raman spectral asymmetry has been reported here from silicon nanowires (SiNWs) prepared from a heavily doped p-type Si wafer using a metal induced etching technique. Raman spectra of SiNWs prepared from two p-type Si wafers with different doping levels show different behaviors in terms of asymmetry as characterized by the asymmetry ratio. The SiNWs prepared from high doped p-type wafer show an anomaly in asymmetry in addition to the red shift and broadening of the Raman line shape due to the presence of the "FAno-quaNTUM" (FANTUM) effect. The heavy doping in the wafer provides a continuum of energy states to be available to interact with confined optic phonons which results in electron-phonon interaction. SiNWs prepared from low doped p-type wafer show a red shift and asymmetric broadening due to the quantum confinement effect alone. Careful analysis has been provided to clearly understand the role of Fano and quantum effects in p-type SiNWs with high doping and their relative contribution in Raman line-shape half-widths. A theoretical framework for supporting the presence of the FANTUM effect has also been proposed to show that how a system with appropriate Fano and quantum effects' relative contribution may result in a near-symmetric Raman line shape. (Figure Presented). © 2017 American Chemical Society. |
URI: | https://doi.org/10.1021/acs.jpcc.6b12811 https://dspace.iiti.ac.in/handle/123456789/8351 |
ISSN: | 1932-7447 |
Type of Material: | Journal Article |
Appears in Collections: | Department of Physics |
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