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| Title: | Electrical Performance of Large-Area Y₂O₃ Memristive Crossbar Array With Ultralow C2C Variability |
| Authors: | Kumar, Sanjay Raj Mukherjee, Shaibal |
| Keywords: | Fabrication;Ion beams;Silicon wafers;Sputtering;Switching;Timing circuits;Yttrium oxide;Cross-bar memory;Crossbar arrays;Cycle-to-cycle (C2C) variability;Dual ion beam sputtering;Dual-ion beam sputtering;Electrical performance;Large area;Performances evaluation;Resistive switching;Yttria.;Substrates |
| Issue Date: | 2022 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Citation: | Kumar, S., Agarwal, A., & Mukherjee, S. (2022). Electrical Performance of Large-Area Y 2 O 3 Memristive Crossbar Array With Ultralow C2C Variability. IEEE Transactions on Electron Devices, 69(7), 3660–3666. https://doi.org/10.1109/TED.2022.3172400 |
| Abstract: | Here, we report the electrical performance analysis of a Y₂O₃-based memristive crossbar array (MCA) of (30x25) on a large Si (100) wafer having a 3-inch diameter by utilizing dual-ion beam sputtering (DIBS) system. The MCA is highly stable and exhibits repeatable and reproducible resistive switching responses in terms of consistent resistive switching voltages ( <formula> <tex>$V_{SET}$</tex> </formula> and <formula> <tex>$V_{RESET}$</tex> </formula> ). The devices in the MCA efficiently depict the impact of device area scaling on the switching voltage parameters. The fabricated devices also show low device-to-device (D2D) variability in <formula> <tex>$V_{SET}$</tex> </formula> (2.64%) <formula> <tex>$V_{RESET}$</tex> </formula> (10.13%) and ultralow cycle-to-cycle (C2C) variability in <formula> <tex>$V_{SET}$</tex> </formula> (0.2%) and <formula> <tex>$V_{RESET}$</tex> </formula> (1.07%). Furthermore, this work also experimentally probes the impacts of various input signal parameters such as applied voltage, compliance current, and pulsewidth (PW) on the variability parameters. IEEE |
| URI: | https://doi.org/10.1109/TED.2022.3172400 https://dspace.iiti.ac.in/handle/123456789/10548 |
| ISSN: | 0018-9383 |
| Type of Material: | Journal Article |
| Appears in Collections: | Department of Electrical Engineering |
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