Exploring the dynamics of threshold switching and electronic properties of Ag, In-doped Sb2 Te phase change material for universal memory

Abstract

Modern electronics with a key component of non-volatile memory has remarkably pervaded our day-to-day lives, starting from music players, to digital cameras, information stored in smart phones and portable external storage devices. High speed and high-density non-volatile memory is the essential component widely used to preserve information in the local servers, hard disc drives (HDD), solid state drives (SSD), external storage devices including rewritable CDs, DVDs and Blu-ray discs. Online data storage refers to store information on the host servers. These servers typically store massive amounts of data that are housed in one or more data centers. All these information needs to be either stored or processed with the help of memory devices. This demands a large capacity of high-speed non-volatile digital data storage media. Despite the existing memories such as HDD, SSD satisfy current demand they suffer to meet high performance computing, due to slow programming characteristics. In order to enable high speed non-volatile memory for future, there are numerous technologies have been explored in the last few decades. Among various emerging memory technologies, chalcogenide based phase change memory (PCM) is considered as a potential candidate for the next-generation non-volatile memory, owing to better scalability, longer data retention, higher endurance and fast programming compared to the other emerging memory technologies