Evaluation of Leakage Currents in Memristor Crossbar Arrays

Abstract

Memristors are novel electronic devices. Memristor-based crossbar arrays have gained a lot of attention for potential applications in nonvolatile memory, in-memory computing, logic design, neuromorphic computing systems, and neural networks. In this paper, we demonstrate the sneaky path current issue within a 3×3 crossbar array. 1T1M scheme has been used to reduce the leakage current. Integrating nMOS and pMOS devices in series with memristors in the crossbar array has optimized the leakage currents. The results show that nMOS devices reduce the leakage currents by 97.35%, whereas pMOS devices reduce the leakage currents by 92.20%. Thus, nMOS outperform pMOS devices in leakage currents optimization. © 2023 IEEE.