Contribution of individual phonon to the band gap renormalization in semiconductors

Abstract

Understanding the origin of temperature-dependent bandgap in semiconductors is essential for their applications in photovoltaics, optoelectronic and space applications. In this regard the electron-phonon coupling is known to play a crucial role in the temperature dependence of the bandgap of semiconductors. Several models have also been proposed in this regard which are also found experimentally compatible

however, these models need to account for more information about the contribution of individual modes in band gap renormalization. The present report is an analytical attempt to do so by utilizing the Bose-Einstein oscillator model, thereby discussing a method for finding the individual renormalization term contributed by respective phonon modes to the overall bandgap. This study contributes to the fundamental understanding of the temperature variation of optical properties of semiconductors that correlates with the role of electron-phonon interaction. © 2024 IOP Publishing Ltd.