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| Title: | Bipolar Attributes of Unipolar Junctionless MOSFETs |
| Authors: | Singh Parihar, Mukta Singh Kranti, Abhinav |
| Keywords: | Bipolar;Hysteresis;Junctionless;MOSFET |
| Issue Date: | 2014 |
| Publisher: | Springer Science and Business Media Deutschland GmbH |
| Citation: | Parihar, M. S., & Kranti, A. (2014). Bipolar Attributes of Unipolar Junctionless MOSFETs. In V. K. Jain & A. Verma (Eds.), Physics of Semiconductor Devices (pp. 169–170). Springer International Publishing. https://doi.org/10.1007/978-3-319-03002-9_42 |
| Abstract: | In this work, we present an analysis of bipolar effects in unipolar junctionless (JL) MOSFETs. The reason for dominant bipolar behavior in JL devices in comparison to inversion mode devices has been analyzed. Bipolar induced effects such as steep subthreshold slope, hysteresis in transfer and output characteristics, single transistor latch, and snapback are presented. Results will be useful for identifying advantages and challenges of JL transistors for dynamic memory applications. © Springer International Publishing Switzerland 2014. |
| URI: | https://doi.org/10.1007/978-3-319-03002-9_42 https://dspace.iiti.ac.in/handle/123456789/15406 |
| ISBN: | 978-331903001-2 |
| ISSN: | 1863-5520 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
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