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https://dspace.iiti.ac.in/handle/123456789/15505
| Title: | Investigation on Hybrid Green Light-Emitting Diode |
| Authors: | Verma, Shruti Mukherjee, Shaibal |
| Keywords: | Efficiency droop;GaN;internal quantum efficiency;ZnO |
| Issue Date: | 2014 |
| Publisher: | Springer Science and Business Media Deutschland GmbH |
| Citation: | Verma, S., & Mukherjee, S. (2014). Investigation on Hybrid Green Light-Emitting Diode. In V. K. Jain & A. Verma (Eds.), Physics of Semiconductor Devices (pp. 281–283). Springer International Publishing. https://doi.org/10.1007/978-3-319-03002-9_71 |
| Abstract: | We propose a hybrid light-emitting diode (LED) design comprising of p-GaN/ p-MgZnO/ InGaN/ n-MgZnO/ n-ZnO emanating green electroluminescence centered around 560 nm. We compare the performance of proposed LED with ZnO and GaN based green LEDs through 2-D numerical simulation. It is found that hybrid LED shows highest IQE of 93.2% with added advantage of least efficiency droop at high injection current. © Springer International Publishing Switzerland 2014. |
| URI: | https://doi.org/10.1007/978-3-319-03002-9_71 https://dspace.iiti.ac.in/handle/123456789/15505 |
| ISBN: | 978-331903001-2 |
| ISSN: | 1863-5520 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
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