Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/15506
Title: Effect of Growth Temperature on Properties of CdZnO Thin Films
Authors: Verma, Shruti
Pandey, Sushil Kumar
Mukherjee, Shaibal
Keywords: AFM;CdZnO;photoluminescence;UV-Vis spectrometry and XRD
Issue Date: 2014
Publisher: Springer Science and Business Media Deutschland GmbH
Citation: Verma, S., Pandey, S. K., Gupta, M., & Mukherjee, S. (2014). Effect of Growth Temperature on Properties of CdZnO Thin Films. In V. K. Jain & A. Verma (Eds.), Physics of Semiconductor Devices (pp. 865–867). Springer International Publishing. https://doi.org/10.1007/978-3-319-03002-9_222
Abstract: Ternary CdZnO thin films were grown on sapphire substrate with varied growth temperature from 300°C to 600°C using dual ion-beam sputtering system. The structural, morphological and optical properties of the films were deeply studied. X-ray Diffraction (XRD) measurements indicate phase separation in the deposited CdZnO films. The photoluminescence studies indicate emission centered around 440 nm ~ 2.8 eV. The optical band gap was confirmed by UV-Vis spectrometric measurements. It was also found that band gap narrows down with the increase in growth temperature. © Springer International Publishing Switzerland 2014.
URI: https://doi.org/10.1007/978-3-319-03002-9_222
https://dspace.iiti.ac.in/handle/123456789/15506
ISBN: 978-331903001-2
ISSN: 1863-5520
Type of Material: Conference Paper
Appears in Collections:Department of Electrical Engineering

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