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https://dspace.iiti.ac.in/handle/123456789/15506
Title: | Effect of Growth Temperature on Properties of CdZnO Thin Films |
Authors: | Verma, Shruti Pandey, Sushil Kumar Mukherjee, Shaibal |
Keywords: | AFM;CdZnO;photoluminescence;UV-Vis spectrometry and XRD |
Issue Date: | 2014 |
Publisher: | Springer Science and Business Media Deutschland GmbH |
Citation: | Verma, S., Pandey, S. K., Gupta, M., & Mukherjee, S. (2014). Effect of Growth Temperature on Properties of CdZnO Thin Films. In V. K. Jain & A. Verma (Eds.), Physics of Semiconductor Devices (pp. 865–867). Springer International Publishing. https://doi.org/10.1007/978-3-319-03002-9_222 |
Abstract: | Ternary CdZnO thin films were grown on sapphire substrate with varied growth temperature from 300°C to 600°C using dual ion-beam sputtering system. The structural, morphological and optical properties of the films were deeply studied. X-ray Diffraction (XRD) measurements indicate phase separation in the deposited CdZnO films. The photoluminescence studies indicate emission centered around 440 nm ~ 2.8 eV. The optical band gap was confirmed by UV-Vis spectrometric measurements. It was also found that band gap narrows down with the increase in growth temperature. © Springer International Publishing Switzerland 2014. |
URI: | https://doi.org/10.1007/978-3-319-03002-9_222 https://dspace.iiti.ac.in/handle/123456789/15506 |
ISBN: | 978-331903001-2 |
ISSN: | 1863-5520 |
Type of Material: | Conference Paper |
Appears in Collections: | Department of Electrical Engineering |
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