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https://dspace.iiti.ac.in/handle/123456789/16377
| Title: | Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications |
| Authors: | Adoni, Chinmayi Semwal, Sandeep |
| Keywords: | Analog/RF;Cutoff frequency;Frequency/Phase modulation;Gain;Linearity;Reconfigurable transistor |
| Issue Date: | 2025 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Citation: | Adoni, C., Semwal, S., Gupta, M., Raskin, J.-P., & Krant, A. (2025). Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/JEDS.2025.3581677 |
| Abstract: | The potential of electrical tunability in a 3-gated (3G) Reconfigurable Field Effect Transistor (RFET) for analog/RF applications is investigated through four distinct configurations (R2-IG-LVT, R1-IG-Ambi, R3-IG-LVT, and R2-IG-HVT). The electrical connections through two program gates (PG) and one control gate (CG) in 3G-RFET supports the implementation of configurations suitable for low-VTH (R2-IG-LVT and R3-IG-LVT) and high-VTH (R2-IGHVT), phase follower/reversal (R2-IG-LVT), frequency doubler (R1-IGAmbi), high gain (R3-IG-LVT), lower parasitic capacitance (R2-IG-LVT and R3-IG-LVT), and higher linearity (R3-IG-LVT) applications. Results showcase electrical tunability as an opportunity to realize many analog/RF features–in–one nanoscale 3G-RFET. © 2013 IEEE. |
| URI: | https://dx.doi.org/10.1109/JEDS.2025.3581677 https://dspace.iiti.ac.in:8080/jspui/handle/123456789/16377 |
| ISSN: | 2168-6734 |
| Type of Material: | Journal Article |
| Appears in Collections: | Department of Electrical Engineering |
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