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https://dspace.iiti.ac.in/handle/123456789/17179
| Title: | Enhanced switching window for DIBS-grown Al/Y2O3/GZO memristor |
| Authors: | Yadav, Saurabh Paul, Animesh Mukherjee, Shaibal |
| Keywords: | C-AFM;Filamentary switching;Memristor;Yttrium oxide |
| Issue Date: | 2026 |
| Publisher: | Elsevier B.V. |
| Citation: | Yadav, S., Kumar, S. N., Paul, A., Nirmal, K. A., Khot, A. C., Dongale, T. D., Kim, T., & Mukherjee, S. (2026). Enhanced switching window for DIBS-grown Al/Y2O3/GZO memristor. Materials Letters, 405. https://doi.org/10.1016/j.matlet.2025.139726 |
| Abstract: | In this letter, we report a dual ion beam sputtered Y<inf>2</inf>O<inf>3</inf> memristor, which exhibits stable bipolar resistive switching governed by the filamentary switching mechanism. The obtained experimental data reveal that the fabricated devices show large memory switching window (>105) with excellent endurance (>5 × 104 cycles) and retention (>106 s) properties by maintaining a high value of the ON/OFF ratio. Moreover, C-AFM analysis also confirms that the fabricated devices exhibit filamentary switching. The fabricated devices efficiently emulate the synaptic learning behavior with better linearity in weight update. © 2025 Elsevier B.V., All rights reserved. |
| URI: | https://dx.doi.org/10.1016/j.matlet.2025.139726 https://dspace.iiti.ac.in:8080/jspui/handle/123456789/17179 |
| ISSN: | 18734979 0167577X |
| Type of Material: | Journal Article |
| Appears in Collections: | Department of Electrical Engineering |
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