Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5056
Title: Ferroelectric Thickness Dependent Characteristics of Negative Capacitance Transistors
Authors: Semwal, Sandeep
Kranti, Abhinav
Keywords: Capacitance;Ferroelectricity;Field effect transistors;Hafnium oxides;Metal insulator boundaries;MIS devices;Scanning probe microscopy;Accurate estimation;Dependent characteristics;Design optimization;Device characteristics;Ferroelectric thickness;Metal ferroelectric metal insulator semiconductors;Negative capacitance;Remnant polarizations;Zirconium compounds
Issue Date: 2021
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Semwal, S., & Kranti, A. (2021). Ferroelectric thickness dependent characteristics of negative capacitance transistors. Paper presented at the IEEE International Symposium on Applications of Feeroelectric, ISAF 2021, International Symposium on Integrated Functionalities, ISIF 2021 and Piezoresponse Force Microscopy Workshop, PFM 2021 - Proceedings, doi:10.1109/ISAF51943.2021.9477365
Abstract: In this work, we investigate the performance of a Hafnium Zirconium oxide (Hf0.5Zr0.5O2) based double gate (DG) metal-ferroelectric-metal-insulator-semiconductor (MFMIS) negative capacitance (NC) field effect transistor (FET) by considering ferroelectric thickness dependent remnant polarization and coercive field. The proposed approach facilitates an insightful and accurate estimation of device characteristics which will be useful for design optimization of MFMIS NCFET architectures. © 2021 IEEE.
URI: https://doi.org/10.1109/ISAF51943.2021.9477365
https://dspace.iiti.ac.in/handle/123456789/5056
ISBN: 9781665404440
Type of Material: Conference Paper
Appears in Collections:Department of Electrical Engineering

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetric Badge: