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https://dspace.iiti.ac.in/handle/123456789/5177
| Title: | Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering |
| Authors: | Mandal, Biswajit Kranti, Abhinav Mukherjee, Shaibal |
| Keywords: | Fabrication;Gallium compounds;II-VI semiconductors;Nanotechnology;RRAM;Semiconductor doping;Sputtering;Thin films;Zinc oxide;Dual ion beam sputtering;Effect of doping upon;Ga-doped ZnO;Memristive behavior;Resistive switching;Ion beams |
| Issue Date: | 2019 |
| Publisher: | IEEE Computer Society |
| Citation: | Kumar, A., Das, M., Mandal, B., Bhardwaj, R., Aaryashree, Kranti, A., & Mukherjee, S. (2019). Nano-scaled ZnO based RRAM with memristive behavior fabricated by dual ion beam sputtering. Paper presented at the Proceedings of the IEEE Conference on Nanotechnology, , 2018-July doi:10.1109/NANO.2018.8626226 |
| Abstract: | This work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior. © 2018 IEEE. |
| URI: | https://doi.org/10.1109/NANO.2018.8626226 https://dspace.iiti.ac.in/handle/123456789/5177 |
| ISBN: | 9781538653364 |
| ISSN: | 1944-9399 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
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