Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5195
Title: Investigation of junctionless transistor based dram
Authors: Navlakha, Nupur
Kranti, Abhinav
Keywords: Transistors;Capacitorless dynamic random access memory;Double gate;Drift diffusion;Electrostatic potential wells;Gate operation;Junctionless transistors;Read operation;Retention time;Dynamic random access storage
Issue Date: 2019
Publisher: Springer Science and Business Media, LLC
Citation: Ansari, M. H. R., Navlakha, N., Lin, J. -., & Kranti, A. (2019). Investigation of junctionless transistor based dram. Paper presented at the Springer Proceedings in Physics, , 215 629-632. doi:10.1007/978-3-319-97604-4_97
Abstract: In this work, we have investigated Double Gate junctionless transistor based capacitorless Dynamic Random Access Memory (1T-DRAM). The back gate is responsible for formation of an electrostatic potential well, while the front gate distinguishes the two states based on the charge stored at the back. The read operation is performed through drift-diffusion mechanism. The independent gate operation results in a retention time of 170 ms for gate length of 400 nm at 85 °C. © Springer Nature Switzerland AG 2019.
URI: https://doi.org/10.1007/978-3-319-97604-4_97
https://dspace.iiti.ac.in/handle/123456789/5195
ISBN: 9783319976037
ISSN: 0930-8989
Type of Material: Conference Paper
Appears in Collections:Department of Electrical Engineering

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