Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5198
Title: Mgzno based uv heterojunction photodetector fabricated using dual ion beam sputtering
Authors: Khan, Md Arif
Singh, Ruchi A.
Mukherjee, Shaibal
Keywords: Fabrication;Heterojunctions;Magnesium alloys;Photodetectors;Photons;Semiconductor alloys;Silicon alloys;Sputtering;Zinc alloys;Dual ion beam sputtering;Growth ambient;Heterojunction photodetectors;P-Type conduction;Photoresponse measurements;Ion beams
Issue Date: 2019
Publisher: Springer Science and Business Media, LLC
Citation: Bhardwaj, R., Sharma, P., Khan, M. A., Singh, R., & Mukherjee, S. (2019). Mgzno based uv heterojunction photodetector fabricated using dual ion beam sputtering. Paper presented at the Springer Proceedings in Physics, , 215 981-984. doi:10.1007/978-3-319-97604-4_149
Abstract: This abstract reports the realization of p-type conduction in Sb (5 at.%): Mg0.10Zn0.90O (SMZO) grown in different growth ambient and then fabrication of SMZO/n-Si based UV heterojunction photodetector grown by dual ion beam sputtering (DIBS) system. The fabricated photodetectors were then probed for the effect of growth ambient using current–voltage (I–V) and photoresponse measurement on photodetector properties. © Springer Nature Switzerland AG 2019.
URI: https://doi.org/10.1007/978-3-319-97604-4_149
https://dspace.iiti.ac.in/handle/123456789/5198
ISBN: 9783319976037
ISSN: 0930-8989
Type of Material: Conference Paper
Appears in Collections:Department of Electrical Engineering

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