Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5201
Title: Evaluation of ga:Mgzno/cigse heterojunction for realization of all sputtered buffer-less solar cell
Authors: Anadkat, Nisheka
Siddharth, Gaurav
Mukherjee, Shaibal
Keywords: Heterojunctions;Ion beams;Sputtering;Carrier transport mechanisms;Conduction band offset;Dual ion beam sputtering systems;Valence band offsets;Solar cells
Issue Date: 2019
Publisher: Springer Science and Business Media, LLC
Citation: Garg, V., Sengar, B. S., Anadkat, N., Siddharth, G., Kumar, S., & Mukherjee, S. (2019). Evaluation of ga:Mgzno/cigse heterojunction for realization of all sputtered buffer-less solar cell. Paper presented at the Springer Proceedings in Physics, , 215 383-386. doi:10.1007/978-3-319-97604-4_58
Abstract: In this article, the valence band offset (VBOff) and conduction band offset (CBOff) values of Cu(In0.70Ga0.30)Se/3at.% Ga:Mg0.20Zn0.80O (GMZO) heterojunction, grown by dual ion beam sputtering system (DIBS), are calculated to understand the carrier transport mechanism at the heterojunction for realization of all sputtered buffer-less solar cells. © Springer Nature Switzerland AG 2019.
URI: https://doi.org/10.1007/978-3-319-97604-4_58
https://dspace.iiti.ac.in/handle/123456789/5201
ISBN: 9783319976037
ISSN: 0930-8989
Type of Material: Conference Paper
Appears in Collections:Department of Electrical Engineering

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