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https://dspace.iiti.ac.in/handle/123456789/5271
| Title: | Steep current transition in germanium junctionless transistor |
| Authors: | Kranti, Abhinav |
| Keywords: | Drain current;Electron devices;Germanium;Ionization;MOSFET devices;Semiconductor devices;Semiconductor junctions;Solid state devices;Current transitions;Gate misalignment;Junctionless;Junctionless transistors;MOS-FET;Semiconductor films;Steep S-swing;Subthreshold swing;Impact ionization |
| Issue Date: | 2017 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Citation: | Gupta, M., & Kranti, A. (2017). Steep current transition in germanium junctionless transistor. Paper presented at the EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits, , 2017-January 1-2. doi:10.1109/EDSSC.2017.8126463 |
| Abstract: | We report on the gate misalignment induced asymmetry to enhance the impact ionization in Germanium (Ge) Junctionless (JL) devices by localizing the carrier depletion to a narrow region of the semiconductor film. Results show that misaligned Ge JL MOSFET can exhibit higher values of impact ionization power per unit volume which leads to a sharp current transition with nearly an ideal Subthreshold swing (S-swing) -1 mV/decade at a drain bias of 0.9 V at room temperature. © 2017 IEEE. |
| URI: | https://doi.org/10.1109/EDSSC.2017.8126463 https://dspace.iiti.ac.in/handle/123456789/5271 |
| ISBN: | 9781538629079 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
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