Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5273
Title: Source drain Gaussian doping profile analysis for high on current of ingaas based HEMT
Authors: Shah, Ambika Prasad
Vishvakarma, Santosh Kumar
Keywords: Doping (additives);Drain current;Electron devices;Gallium alloys;Gallium compounds;Gaussian distribution;Indium alloys;Semiconducting indium;Semiconducting indium gallium arsenide;Semiconductor junctions;Solid state devices;Beta parameter;Doping profiles;Gaussian Doping Profiles;High electron mobility;High performance;In0.53Ga0.47As;InGaAs;Pearson distribution;High electron mobility transistors
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Yadav, N., Shah, A. P., Beohar, A., & Vishvakarma, S. K. (2017). Source drain gaussian doping profile analysis for high on current of ingaas based HEMT. Paper presented at the EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits, , 2017-January 1-2. doi:10.1109/EDSSC.2017.8126483
Abstract: In this paper, we study the source drain Gaussian doping profile of strained In0.53Ga0.47AS based high electron mobility FinFET transistor (HEMT). The Gaussian doping profile is created using Pearson distribution model by setting the values of the gamma and beta parameters (the function characterizing the amorphous part of the profile). The ON current increases exponentially and the step doping also reduces the ON resistance, hence mobility increases. The proposed doping profile gives 2000 mA current for 30 nm gate length HFET. © 2017 IEEE.
URI: https://doi.org/10.1109/EDSSC.2017.8126483
https://dspace.iiti.ac.in/handle/123456789/5273
ISBN: 9781538629079
Type of Material: Conference Paper
Appears in Collections:Department of Electrical Engineering

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