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| Title: | Influence of sidewall spacer thickness on steep switching in Ge junctionless MOSFETs |
| Authors: | Kranti, Abhinav |
| Keywords: | Germanium;Ionization;MOSFET devices;Channel materials;Double gate MOSFET;Fringing fields;Germaniums (Ge);Junctionless;Junctionless transistor;Sidewall spacer;Subthreshold swing;Impact ionization |
| Issue Date: | 2017 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Citation: | Gupta, M., & Kranti, A. (2017). Influence of sidewall spacer thickness on steep switching in ge junctionless MOSFETs. Paper presented at the 2016 3rd International Conference on Emerging Electronics, ICEE 2016, doi:10.1109/ICEmElec.2016.8074582 |
| Abstract: | In this work, we investigate the impact of sidewall spacer thickness on the subthreshold swing (5-swing) in symmetrical double gate (DG) Silicon (Si) and Germanium (Ge) junctionless (JL) transistor. It has shown that impact ionization (II) can be enhanced by an optimized narrow spacer whereas the use of non-optimized wider spacer lowers the degree of II by the influence of fringing field. The work demonstrates new opportunities to trigger II at lower drain bias by using Ge as channel material in JL devices with an optimized sidewall spacer. © 2016 IEEE. |
| URI: | https://doi.org/10.1109/ICEmElec.2016.8074582 https://dspace.iiti.ac.in/handle/123456789/5285 |
| ISBN: | 9781509036592 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
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