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| Title: | Punch-through reading mechanism and body raised up structure for a novel Punch-Through DRAM |
| Authors: | Kranti, Abhinav |
| Keywords: | 1t drams;Channel length;Channel thickness;Gate length;Programming window;Punch-through;Retention time;Integrated circuits |
| Issue Date: | 2017 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Citation: | Lin, C. -., Lin, J. -., Lee, W. -., Huang, C. -., Chang, T. -., & Kranti, A. (2017). Punch-through reading mechanism and body raised up structure for a novel punch-through DRAM. Paper presented at the 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, 866-868. doi:10.1109/ICSICT.2016.7999064 |
| Abstract: | It is the first time, we propose a new reading mechanism for an ARAM-like 1T-DRAM by exploiting Punch-Through (PT) phenomenon. We simulated and investigated the results of a modified ARAM structure with respect to different channel length, channel thickness. We found that the structure has an acceptable programming window (33 μA/um) at shorter gate lengths. The retention time can be improved by using a raised P-body which is beneficial in achieving a retention time of 341 ms? © 2016 IEEE. |
| URI: | https://doi.org/10.1109/ICSICT.2016.7999064 https://dspace.iiti.ac.in/handle/123456789/5296 |
| ISBN: | 9781467397179 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
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