Analysis of single-trap-induced random telegraph noise on asymmetric high-k spacer FinFET

Abstract

In this paper, we analyze the effects of single-chargetrapinduced random telegraphic noise (RTN) on asymmetricdual high-K spacer based FinFET (ADS-FinFET). The effectsof RTN reduces in proposed device because asymmetric high-K spacer reduces the electric field effect at source and formation of the barrier between source to gate/drain. The spacer width optimization will provide maximum possible performance and tolerant towards RTN at 12 nm high-K spacer width. Reduced equivalent oxide thickness (EOT) also help to reduce RTN effect whereas, RTN impact increases with device scaling. © 2016 IEEE.