Please use this identifier to cite or link to this item:
https://dspace.iiti.ac.in/handle/123456789/5342
| Title: | Junctionless transistors for dynamic memory and sensing applications |
| Authors: | Kranti, Abhinav |
| Keywords: | Biosensors;Dynamic random access storage;Nanoelectronics;Transistors;bipolar;Design optimization;junctionless;Junctionless transistors;Output characteristics;Sensing applications;Subthreshold slope;Transistor designs;Impact ionization |
| Issue Date: | 2016 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Citation: | Parihar, M. S., & Kranti, A. (2016). Junctionless transistors for dynamic memory and sensing applications. Paper presented at the 2014 IEEE International Nanoelectronics Conference, INEC 2014, doi:10.1109/INEC.2014.7460448 |
| Abstract: | In this work, we report on the feasibility and design optimization of impact ionization junctionless transistors for dynamic memory and bio-sensing applications. Optimization of snapback and the hysteresis effects in the output characteristics to achieve high current margin between the two reading states of a dynamic memory are presented. The optimized cell offers nearly 4 orders of difference in the reading current of the two logic states. A possible application of these JL transistors for designing an ultra-sensitive bio-sensor is also outlined and compared with the conventional inversion mode transistor design. © 2014 IEEE. |
| URI: | https://doi.org/10.1109/INEC.2014.7460448 https://dspace.iiti.ac.in/handle/123456789/5342 |
| ISBN: | 9781479950379 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Altmetric Badge: