Please use this identifier to cite or link to this item:
https://dspace.iiti.ac.in/handle/123456789/5394
| Title: | Performance assessment of ULP analog/RF MOSFET architectures |
| Authors: | Kranti, Abhinav |
| Keywords: | Bandwidth;Microelectronics;Analog/RF performance;Channel dopings;Comparative analysis;Gain and bandwidths;High gain;Limited bandwidth;MOS-FET;Performance assessment;MOSFET devices |
| Issue Date: | 2014 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Citation: | Ghosh, D., & Kranti, A. (2014). Performance assessment of ULP analog/RF MOSFET architectures. Paper presented at the 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014, doi:10.1109/S3S.2014.7028199 |
| Abstract: | A comparative analysis of ULP analog/RF performance metrics have been presented. TFETs will be useful in high-gain ULP circuits with limited bandwidth requirement. Underlap INV and JL devices, achieving a balance between gain and bandwidth, are most suitable for ULP analog/RF applications. JL MOSFETs do not suffer from any significant degradation in metrics despite higher channel doping. © 2014 IEEE. |
| URI: | https://doi.org/10.1109/S3S.2014.7028199 https://dspace.iiti.ac.in/handle/123456789/5394 |
| ISBN: | 9781479974382 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Altmetric Badge: