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https://dspace.iiti.ac.in/handle/123456789/5419
| Title: | Effect of doping profile on tunneling field effect transistor performance |
| Authors: | Vishvakarma, Santosh Kumar |
| Keywords: | Ambipolar behavior;Doping profiles;Effect of doping;Gaussian profiles;High density layers;Off-state current;Subthreshold slope;Tunneling field-effect transistors;Drain current;Electron devices;Field effect transistors |
| Issue Date: | 2013 |
| Citation: | Vijayvargiya, V., & Vishvakarma, S. (2013). Effect of doping profile on tunneling field effect transistor performance. Paper presented at the Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013, 195-198. doi:10.1109/CDE.2013.6481376 |
| Abstract: | Tunneling field effect transistor (TFETs) has recently attracted considerable interest because of their potential use in low power logic application. In this paper, we have investigated the effect of uniform doping versus varying doping (Gaussian) profile on TFET performance. We have shown that off-state current and subthreshold slope (SS) in the TFET can be improved by using low doping profile at channel-drain junction. It provides an improved ION/IoFF and subthreshold slope of 1010 and 47 mV/dec respectively. Also by placing small high density layer in the channel near source-channel junction improve the SS to 43 mV/dec and Ion current by a few order. Finally, it is shown that ambipolar behavior is also reduced. © 2013 IEEE. |
| URI: | https://doi.org/10.1109/CDE.2013.6481376 https://dspace.iiti.ac.in/handle/123456789/5419 |
| ISBN: | 9781467346689 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
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