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| Title: | Isomorphic polynomial based precise analytical modeling of 3D potential distribution for surrounding gate gate-all-around MOSFET |
| Authors: | Vishvakarma, Santosh Kumar |
| Keywords: | Analytical models;Dissociation;Electrostatics;MOSFET devices;ATLAS device simulators;Characteristic length;Dependent characteristics;Gate-all-around MOSFET;Multiple gates;Potential distributions;Short-channel effect;Surrounding-gate;Three dimensional |
| Issue Date: | 2012 |
| Publisher: | IEEE Computer Society |
| Citation: | Sharma, D., & Vishvakarma, S. K. (2012). Isomorphic polynomial based precise analytical modeling of 3D potential distribution for surrounding gate gate-all-around MOSFET. Paper presented at the 2012 International Conference on Emerging Electronics, ICEE 2012, doi:10.1109/ICEmElec.2012.6636261 |
| Abstract: | We present an analytical model of 3D potential distribution for surrounding-gate (SurG) gate-all-around (GAA) MOSFET. The model is based on solution of Laplace's and Poisson's equations, where isomorphic polynomial functions are used to describe the potential distribution. The short channel effects are precisely accounted for by introducing z dependent characteristic length. From this, the device electrostatics can be calculated in the full range of bias voltage. The model compares well with numerical calculations obtained from the 3D ATLAS device simulator. © 2012 IEEE. |
| URI: | https://doi.org/10.1109/ICEmElec.2012.6636261 https://dspace.iiti.ac.in/handle/123456789/5440 |
| ISBN: | 9781467331364 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
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