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| Title: | Exciton Lasing in ZnO-ZnCr2O4 Nanowalls |
| Authors: | Dixit, Tejendra Agrawal, Jitesh Singh, Vipul |
| Keywords: | Chromium compounds;II-VI semiconductors;Infrared devices;Oxide semiconductors;Photoluminescence;Photoluminescence spectroscopy;Temperature;Wide band gap semiconductors;Zinc oxide;Band transitions;Exciton-exciton scattering;Low temperatures;Plasmon coupling;Plausible mechanisms;Threshold power;Two-photon emission;Wavelength-selective;Excitons |
| Issue Date: | 2019 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Citation: | Dixit, T., Agrawal, J., Muralidhar, M., Murakami, M., Ganapathi, K. L., Singh, V., & Rao, M. S. R. (2019). Exciton lasing in ZnO-ZnCr2O4 nanowalls. IEEE Photonics Journal, 11(6) doi:10.1109/JPHOT.2019.2945010 |
| Abstract: | We demonstrate low power continuous wave, red and NIR exciton lasing with FWHM of 1 nm, quality factor of 680 and threshold power of 100 μW in ZnO-ZnCr2O4 nanowalls. The NIR lasing was enabled by integrating ZnO with ZnCr2O4. Moreover, wavelength selective photoluminescence (tuning from UV to NIR) and enhanced two-photon emission were also observed in ZnO-ZnCr2O4 nanowalls. The exciton-exciton scattering can be attributed to the observation of exciton lasing at low temperature (<200 K). A plausible mechanism has been elucidated in order to explain the results. This work will open new opportunities in the advancement of oxide semiconductors based exciton lasers. © 2009-2012 IEEE. |
| URI: | https://doi.org/10.1109/JPHOT.2019.2945010 https://dspace.iiti.ac.in/handle/123456789/5686 |
| ISSN: | 1943-0655 |
| Type of Material: | Journal Article |
| Appears in Collections: | Department of Electrical Engineering |
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