Half-select free bit-line sharing 12T SRAM with double-adjacent bits soft error correction and a reconfigurable FPGA for low-power applications

Abstract

This work presents a half-select free 12T SRAM cell with Data-Dependent Feedback Cutting approach to improve the write ability and isolated read path to enhance the read stability. The enhanced read and write ability is 1.95× and 2.84× larger respectively than that of the conventional 6T cell at 0.4 V. The half-select free behavior of proposed cell using the cross-point read/write structure facilitates the bit-interleaving memory architecture to effectively reduce the multi-bits soft error occurrence. The incorporated PMOS stacking effect in inverter pairs of the proposed cell offers the reduced leakage power which is 0.59× to that of 6T, at 0.4 V supply. To further minimize the leakage power at array level, the bit lines between two adjacent cells have been shared that consumes only 0.38× leakage power than that of the conventional 6T array for a 1 KB macro. Moreover, a Reconfigurable FPGA architecture is proposed for low power applications. The simulated static and active power consumption of 12T SRAM based reconfigurable FPGA is 0.22× and 0.45× when compared with the regular 12T FPGA. Finally, a Double Adjacent-bits Error Detection and Correction (DAEDC) scheme is suggested for the proposed bit-interleaved 12T SRAM array, to reduce the soft error effects. © 2019 Elsevier GmbH