Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5761
Title: Symmetric dual gate insulator-based FinFET module and design window for reliable circuits
Authors: Shah, Ambika Prasad
Vishvakarma, Santosh Kumar
Keywords: Charge trapping;Electrostatic devices;Integrated circuit manufacture;Leakage currents;Roughness measurement;Threshold voltage;Timing circuits;Back-gate voltages;Electrostatic control;Gate-leakage current;Line Edge Roughness;Linewidth roughness;Process Variation;Short-channel effect;Spacer materials;FinFET;analytical error;Article;calibration;electric potential;electron;equipment design;simulation;static electricity
Issue Date: 2019
Publisher: Institution of Engineering and Technology
Citation: Yadav, N., Shah, A. P., Beohar, A., & Vishvakarma, S. K. (2019). Symmetric dual gate insulator-based FinFET module and design window for reliable circuits. Micro and Nano Letters, 14(3), 317-322. doi:10.1049/mnl.2018.5210
Abstract: High-k spacer and gate insulator materials have been exhaustively studied nowadays for the enhancement of electrostatic control and reduction of short-channel effects in scaled devices. The work presents a high-performance and charge trap tolerant FinFET module at 10 nm gate length. Dual layer gate insulator (inner low-k and outer high-k) introduces to reduce charge trapping from the channel and outside into the gate oxide. It reduces the gate leakage current by 51.6% compared to conventional FinFET. Further, they demonstrate single charge trapping (SCT) induce effects and proposed optimised high-k spacer width of the SCT tolerant design. SCT analysis is presented in different high-k spacer materials and back-gate voltages. Process variation sources such as line edge roughness and line width roughness are also analysed for the circuit design. © The Institution of Engineering and Technology 2018.
URI: https://doi.org/10.1049/mnl.2018.5210
https://dspace.iiti.ac.in/handle/123456789/5761
ISSN: 1750-0443
Type of Material: Journal Article
Appears in Collections:Department of Electrical Engineering

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