Please use this identifier to cite or link to this item:
https://dspace.iiti.ac.in/handle/123456789/5927
Title: | Utilization of surface plasmon resonance of Au/Pt nanoparticles for highly photosensitive ZnO nanorods network based plasmon field effect transistor |
Authors: | Kumar, Ashish Dixit, Tejendra Palani, Anand Iyamperumal Singh, Vipul |
Keywords: | Charge transfer;Gold;Light sensitive materials;Low temperature production;Metal nanoparticles;Nanoparticles;Nanorods;Photosensitivity;Plasmons;Platinum;Surface plasmon resonance;Temperature;Threshold voltage;Zinc oxide;Electrical performance;Field-effect mobilities;Large scale productions;Low temperatures;Plasmonic effects;Surface plasmons;Zno nanorod networks;ZnO Nanorods Networks;Field effect transistors |
Issue Date: | 2017 |
Publisher: | Elsevier B.V. |
Citation: | Kumar, A., Dixit, T., Palani, I. A., Nakamura, D., Higashihata, M., & Singh, V. (2017). Utilization of surface plasmon resonance of Au/Pt nanoparticles for highly photosensitive ZnO nanorods network based plasmon field effect transistor. Physica E: Low-Dimensional Systems and Nanostructures, 93, 97-104. doi:10.1016/j.physe.2017.06.005 |
Abstract: | Hydrothermally processed highly photosensitive ZnO nanorods based plasmon field effect transistors (PFETs) have been demonstrated utilizing the surface plasmon resonance coupling of Au and Pt nanoparticles at Au/Pt and ZnO interface. A significantly enhanced photocurrent was observed due to the plasmonic effect of the metal nanoparticles (NPs). The Pt coated PFETs showed Ion/Ioff ratio more than 3 × 104 under the dark condition, with field-effect mobility of 26 cm2 V−1 s−1 and threshold voltage of −2.7 V. Moreover, under the illumination of UV light (λ = 350 nm) the PFET revealed photocurrent gain of 105 under off-state (−5 V) of operation. Additionally, the electrical performance of PFETs was investigated in detail on the basis of charge transfer at metal/ZnO interface. The ZnO nanorods growth temperature was preserved at 110 °C which allowed a low temperature, economical and simple method to develop highly photosensitive ZnO nanorods network based PFETs for large scale production. © 2017 |
URI: | https://doi.org/10.1016/j.physe.2017.06.005 https://dspace.iiti.ac.in/handle/123456789/5927 |
ISSN: | 1386-9477 |
Type of Material: | Journal Article |
Appears in Collections: | Department of Electrical Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Altmetric Badge: