Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5927
Title: Utilization of surface plasmon resonance of Au/Pt nanoparticles for highly photosensitive ZnO nanorods network based plasmon field effect transistor
Authors: Kumar, Ashish
Dixit, Tejendra
Palani, Anand Iyamperumal
Singh, Vipul
Keywords: Charge transfer;Gold;Light sensitive materials;Low temperature production;Metal nanoparticles;Nanoparticles;Nanorods;Photosensitivity;Plasmons;Platinum;Surface plasmon resonance;Temperature;Threshold voltage;Zinc oxide;Electrical performance;Field-effect mobilities;Large scale productions;Low temperatures;Plasmonic effects;Surface plasmons;Zno nanorod networks;ZnO Nanorods Networks;Field effect transistors
Issue Date: 2017
Publisher: Elsevier B.V.
Citation: Kumar, A., Dixit, T., Palani, I. A., Nakamura, D., Higashihata, M., & Singh, V. (2017). Utilization of surface plasmon resonance of Au/Pt nanoparticles for highly photosensitive ZnO nanorods network based plasmon field effect transistor. Physica E: Low-Dimensional Systems and Nanostructures, 93, 97-104. doi:10.1016/j.physe.2017.06.005
Abstract: Hydrothermally processed highly photosensitive ZnO nanorods based plasmon field effect transistors (PFETs) have been demonstrated utilizing the surface plasmon resonance coupling of Au and Pt nanoparticles at Au/Pt and ZnO interface. A significantly enhanced photocurrent was observed due to the plasmonic effect of the metal nanoparticles (NPs). The Pt coated PFETs showed Ion/Ioff ratio more than 3 × 104 under the dark condition, with field-effect mobility of 26 cm2 V−1 s−1 and threshold voltage of −2.7 V. Moreover, under the illumination of UV light (λ = 350 nm) the PFET revealed photocurrent gain of 105 under off-state (−5 V) of operation. Additionally, the electrical performance of PFETs was investigated in detail on the basis of charge transfer at metal/ZnO interface. The ZnO nanorods growth temperature was preserved at 110 °C which allowed a low temperature, economical and simple method to develop highly photosensitive ZnO nanorods network based PFETs for large scale production. © 2017
URI: https://doi.org/10.1016/j.physe.2017.06.005
https://dspace.iiti.ac.in/handle/123456789/5927
ISSN: 1386-9477
Type of Material: Journal Article
Appears in Collections:Department of Electrical Engineering

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