Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5969
Title: Impact of sputter-instigated plasmonic features in TCO films: For ultrathin photovoltaic applications
Authors: Awasthi, Vishnu Kumar
Mukherjee, Shaibal
Keywords: Electron energy levels;Electron energy loss spectroscopy;Energy dissipation;Field emission microscopes;Gallium;Light scattering;Metals;Optical properties;Oxide films;Photoelectron spectroscopy;Plasmons;Scanning electron microscopy;Solar cells;Spectroscopic ellipsometry;Ultraviolet photoelectron spectroscopy;Electron energy loss spectrum;Field emission scanning electron microscopy;Gadoped ZnO (GZO);Optical path lengths;Photovoltaic applications;Plasmon generation;Structural and optical properties;Trapping mechanisms;Ultrathin films
Issue Date: 2017
Publisher: American Institute of Physics Inc.
Citation: Awasthi, V., Garg, V., Sengar, B. S., Pandey, S. K., Aaryashree, Kumar, S., . . . Mukherjee, S. (2017). Impact of sputter-instigated plasmonic features in TCO films: For ultrathin photovoltaic applications. Applied Physics Letters, 110(10) doi:10.1063/1.4978269
Abstract: The structural and optical properties of Ga-doped ZnO (GZO) and Ga-doped MgZnO (GMZO) individual films are analyzed. Sputter-instigated plasmonic features are observed in individual GZO and GMZO films due to the formation of metal and metal oxide nanoclusters. The plasmon generation is verified by electron energy loss spectra obtained by ultraviolet-photoelectron spectroscopy, spectroscopic ellipsometry, and field-emission scanning-electron microscopy measurements. This is promising in terms of increasing the efficiency of the solar cell by increasing the optical path length in the absorbing layer while keeping the same physical length by light scattering and trapping mechanism. © 2017 Author(s).
URI: https://doi.org/10.1063/1.4978269
https://dspace.iiti.ac.in/handle/123456789/5969
ISSN: 0003-6951
Type of Material: Journal Article
Appears in Collections:Department of Electrical Engineering

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