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https://dspace.iiti.ac.in/handle/123456789/6159
| Title: | CaF2 surface passivation of lead selenide grown on BaF 2 |
| Authors: | Mukherjee, Shaibal |
| Keywords: | CaF2 passivation;Current decay;Lead salts;Lead selenide;Material-based;Minority carrier lifetimes;Photoluminescence intensities;PL measurements;Positive effects;Sensor applications;Surface passivation;Carrier lifetime;Epitaxial growth;Photoluminescence;Salts;Sensors;Surfaces;Passivation |
| Issue Date: | 2011 |
| Citation: | Mukherjee, S., Li, D., Bi, G., Ma, J., Elizondo, S. L., Gautam, A., & Shi, Z. (2011). CaF2 surface passivation of lead selenide grown on BaF 2. Microelectronic Engineering, 88(3), 314-317. doi:10.1016/j.mee.2010.11.035 |
| Abstract: | A new method of surface passivation of PbSe epitaxial layers by growing a thin epitaxial CaF2 layer is proposed. Improvement in photoluminescence (PL) intensity is observed when the PbSe layer is passivated. The minority carrier lifetime (τ), measured by photo-current decay method corroborates PL measurements and shows a consistent, albeit not considerable, improvement in the lifetime of PbSe samples after surface passivation. The positive effect of surface passivation, especially at low heat-sink temperature, offered by a new passivating material is critically important for IV-VI material-based infrared detector and sensor applications. © 2010 Elsevier B.V. All rights reserved. |
| URI: | https://doi.org/10.1016/j.mee.2010.11.035 https://dspace.iiti.ac.in/handle/123456789/6159 |
| ISSN: | 0167-9317 |
| Type of Material: | Journal Article |
| Appears in Collections: | Department of Electrical Engineering |
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