Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7413
Title: Effect of Si doping on optical & electrical property of ZnO
Authors: Kumar, Sunil
Shirage, Parasharam Maruti
Sen, Somaditya
Keywords: Sintering;Sol-gel process;Sol-gels;Dc conductivity;Defect state;Si-doping;Solid state sintering;Solubility limits;Photonics
Issue Date: 2014
Publisher: OSA - The Optical Society
Citation: Srivastava, T., Bajpai, G., Kumar, S., Shirage, P., & Sen, S. (2014). Effect of si doping on optical & electrical property of ZnO. Paper presented at the Optics InfoBase Conference Papers, doi:10.1364/PHOTONICS.2016.W3A.88
Abstract: Zn (1-x)SixO for x= 0, 0.041, 0.055 & 0.083 was synthesized by sol-gel method followed by solid state sintering. Quenching of defect state and increase in DC conductivity was observed till x= 0.055 (solubility limit). © OSA 2016.
URI: https://doi.org/10.1364/PHOTONICS.2016.W3A.88
https://dspace.iiti.ac.in/handle/123456789/7413
ISBN: 9781943580224
Type of Material: Conference Paper
Appears in Collections:Department of Metallurgical Engineering and Materials Sciences

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