Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7678
Title: Reduction of O2– related defect states related to increased bandgap in Si4 + substituted ZnO
Authors: Kumar, Sunil
Shirage, Parasharam Maruti
Sen, Somaditya
Keywords: Defects;Energy gap;Oxygen;Photoluminescence;Zinc oxide;Defect state;Green emissions;Oxygen deficiency;Oxygen deficient;Quantitative evaluation;Structural regularity;Urbach energy;Urbach tail;Oxygen vacancies
Issue Date: 2016
Publisher: Elsevier Ltd
Citation: Srivastava, T., Kumar, S., Shirage, P., & Sen, S. (2016). Reduction of O2– related defect states related to increased bandgap in Si4 + substituted ZnO. Scripta Materialia, 124, 11-14. doi:10.1016/j.scriptamat.2016.06.038
Abstract: ZnO is known to have oxygen vacancies which count for green emission. The oxygen deficient ZnO system has a bandgap of 3.12 eV with an Urbach tail of 0.083 eV which hints at structural irregularities in the material. This inherent property of oxygen deficiency is reduced by substituting with Si4 +, most probably due to the extra charge on the substituent ions, improving the structural regularity and is revealed by photoluminescence. Reducing Urbach energy and increasing bandgap supports the claim and is supported by a quantitative evaluation of defects in ZnO. © 2016 Elsevier B.V.
URI: https://doi.org/10.1016/j.scriptamat.2016.06.038
https://dspace.iiti.ac.in/handle/123456789/7678
ISSN: 1359-6462
Type of Material: Journal Article
Appears in Collections:Department of Metallurgical Engineering and Materials Sciences

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