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https://dspace.iiti.ac.in/handle/123456789/7678
Title: | Reduction of O2– related defect states related to increased bandgap in Si4 + substituted ZnO |
Authors: | Kumar, Sunil Shirage, Parasharam Maruti Sen, Somaditya |
Keywords: | Defects;Energy gap;Oxygen;Photoluminescence;Zinc oxide;Defect state;Green emissions;Oxygen deficiency;Oxygen deficient;Quantitative evaluation;Structural regularity;Urbach energy;Urbach tail;Oxygen vacancies |
Issue Date: | 2016 |
Publisher: | Elsevier Ltd |
Citation: | Srivastava, T., Kumar, S., Shirage, P., & Sen, S. (2016). Reduction of O2– related defect states related to increased bandgap in Si4 + substituted ZnO. Scripta Materialia, 124, 11-14. doi:10.1016/j.scriptamat.2016.06.038 |
Abstract: | ZnO is known to have oxygen vacancies which count for green emission. The oxygen deficient ZnO system has a bandgap of 3.12 eV with an Urbach tail of 0.083 eV which hints at structural irregularities in the material. This inherent property of oxygen deficiency is reduced by substituting with Si4 +, most probably due to the extra charge on the substituent ions, improving the structural regularity and is revealed by photoluminescence. Reducing Urbach energy and increasing bandgap supports the claim and is supported by a quantitative evaluation of defects in ZnO. © 2016 Elsevier B.V. |
URI: | https://doi.org/10.1016/j.scriptamat.2016.06.038 https://dspace.iiti.ac.in/handle/123456789/7678 |
ISSN: | 1359-6462 |
Type of Material: | Journal Article |
Appears in Collections: | Department of Metallurgical Engineering and Materials Sciences |
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