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| Title: | Role of Ga3+/Ti4+ induced defects on UV sensing applications of Zn0.96875 (Gaxti1-X)0.03125 O |
| Authors: | Mishra, Prashant Kumar Ayaz, Saniya Nasir, Mohd Farooq Gupta, Prashant Sen, Somaditya |
| Issue Date: | 2020 |
| Publisher: | American Institute of Physics Inc. |
| Citation: | Mishra, P. K., Ayaz, S., Bajpai, G., Nasir, M., Gupta, P., & Sen, S. (2020). Role of Ga3+/Ti4+ induced defects on UV sensing applications of Zn0.96875 (Gaxti1-X)0.03125 O. Paper presented at the AIP Conference Proceedings, , 2265 doi:10.1063/5.0016767 |
| Abstract: | The simultaneous substitution of Ga3+ and Ti4+ for Zn2+ in ZnO has the tendency to reduce oxygen vacancies because of the higher charge of Ga3+ and Ti4+ ions than the Zn2+ ion. The reduction in oxygen vacancies has been verified from the photoluminescence studies. The UV sensing mechanism exhibits fast and slow response and recovery. Ga3+ incorporation enhances the photocurrent drastically as revealed from UV sensing behavior. The higher sensitivity is achieved for of (Ga/Ti) co-doped samples due to the increase in oxygen interstitials defects. © 2020 American Institute of Physics Inc.. All rights reserved. |
| URI: | https://doi.org/10.1063/5.0016767 https://dspace.iiti.ac.in/handle/123456789/7714 |
| ISBN: | 9.78074E+12 |
| ISSN: | 0094-243X |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Physics |
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