Electronic properties of Fe2TiSn1-xSix

Abstract

Transport properties of Heusler compositions, Fe2TiSn1-xSix (x = 0, 0.05, 0.1) have been investigated with temperature dependent electrical resistivity measurements in the presence of magnetic field. The parent composition, Fe2TiSn, is prone to Fe/Ti antisite disorder that gets reflected in its low temperature resistivity behavior. With Si doping, this disorder is seen to decrease. However, solubility limit of Si is reached with x = 0.1. X-ray diffraction profile shows clear signatures of secondary phase formation in x = 0.1, disturbing the L21 symmetry in x = 0 and 0.05. It is noticed that samples show a superconducting drop at ∼ 4K. This is not a bulk property though, and comes to fore due to presence of excess Sn on the sample surface. © 2017 Author(s).