Please use this identifier to cite or link to this item:
https://dspace.iiti.ac.in/handle/123456789/7780
| Title: | Charge transport in NdNiO3 thin films: Effects of mn-doping versus tensile strain |
| Authors: | Mavani, Krushna R. |
| Keywords: | Charge transfer;Manganese;Semiconductor insulator boundaries;Solid state physics;Strain;Tensile strain;Thin films;Charge-transfer gap;Comparative studies;High temperature;Insulating state;Low temperatures;Metallic state;Mn-doping;Semiconductor doping |
| Issue Date: | 2014 |
| Publisher: | American Institute of Physics Inc. |
| Citation: | Chandra, M., Aziz, F., Rana, R., Late, R., Rana, D. S., & Mavani, K. R. (2014). Charge transport in NdNiO3 thin films: Effects of mn-doping versus tensile strain. Paper presented at the AIP Conference Proceedings, , 1591 1375-1376. doi:10.1063/1.4872964 |
| Abstract: | We have performed a comparative study of total three films, two films of NdNiO3 deposited on SrTiO3 (STO) and NdGaO3 (NGO) single-crystals and one 10% Mn-doped thin film of NdNi0.9Mn0.1O3 deposited on NGO. We find that both, the enhanced tensile strain and the Mn-doping drive the system to an insulating state from a metallic state at high temperatures. NdNiO3/NGO film shows a metal-insulator transition, which disappears in the other two films due to opening of charge-transfer gap. These results reveal that the effect of tensile strain on the resistivity of NdNiO3 is profound at low temperatures, whereas Mn-doping clearly dominates at high temperatures. © 2014 AIP Publishing LLC. |
| URI: | https://doi.org/10.1063/1.4872964 https://dspace.iiti.ac.in/handle/123456789/7780 |
| ISBN: | 9.78074E+12 |
| ISSN: | 0094-243X |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Physics |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Altmetric Badge: