Raman scattering study on sequentially Au implanted sample

Abstract

A sequential two-stage 32 keV and 1.5 MeV Au implantation technique has been used to synthesize strained Si nanocrystals. Samples were annealed in air at temperatures between 500° to 950° C for a fixed annealing time of 1 hr. Annealing of the as-implanted sample at 500° C has been found to result in strain free Si NC formation. Higher temperature annealing is found to result in growth in size from recrystallization of the a-Si matrix. The data could be well explained using a phonon confinement model with an extremely narrow size distribution. © 2013 AIP Publishing LLC.