Contrasting effects of compressive and tensile strain and doping-induced opening of charge-transfer gap in NdNi0.90Mn0.10O 3 thin films

Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7784

Title:	Contrasting effects of compressive and tensile strain and doping-induced opening of charge-transfer gap in NdNi0.90Mn0.10O 3 thin films
Authors:	Mavani, Krushna R.
Issue Date:	2013
Citation:	Chandra, M., Khare, A., Aziz, F., Rana, R., Rana, D. S., & Mavani, K. R. (2013). Contrasting effects of compressive and tensile strain and doping-induced opening of charge-transfer gap in NdNi0.90Mn0.10O 3 thin films. Paper presented at the AIP Conference Proceedings, , 1512 986-987. doi:10.1063/1.4791373
Abstract:	We have studied the effects of Mn-doping in a series of NdNi 1-xMnxO3 (x = 0, 0.10) thin films deposited on NdGaO3 (001) and YAlO3 (100) substrates, respectively with tensile and compressive in-plane strains. Interestingly, only 10% Mn-doping totally suppresses the metallicity in both the thin films indicating an opening of charge-transfer gap. In addition, we have also observed contrasting effects of compressive and tensile strains on electrical transport of Mn-doped thin films. There is an enhancement in magnetization as a result of Mn-doping. © 2013 American Institute of Physics.
URI:	https://doi.org/10.1063/1.4791373 https://dspace.iiti.ac.in/handle/123456789/7784
ISBN:	9.78074E+12
ISSN:	0094-243X
Type of Material:	Conference Paper
Appears in Collections:	Department of Physics

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