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https://dspace.iiti.ac.in/handle/123456789/8542
| Title: | Ultraviolet photoluminescence from stressed silicon nanoclusters |
| Authors: | Sahu, Gayatri |
| Keywords: | Amorphous silicon;Luminescence;Metal ions;Metals;Nanoclusters;Plasmons;Surface plasmon resonance;Amorphous Si;Implantation technique;Localized surface plasmon resonance;Scattering methods;Si nanocluster;Stressed silicon;Ultraviolet photoluminescence;UV light-emitting;Silicon |
| Issue Date: | 2014 |
| Publisher: | American Institute of Physics Inc. |
| Citation: | Sahu, G., Sahu, V., & Kukreja, L. M. (2014). Ultraviolet photoluminescence from stressed silicon nanoclusters. Journal of Applied Physics, 115(8) doi:10.1063/1.4866361 |
| Abstract: | Synthesis of UV light emitting stressed Si nanoclusters embedded in amorphous Si layer, using a dual Ag ion implantation technique has been reported. The stressed nanoclusters exhibit a very narrow photo-luminescence in UV regime at around 3.28 eV. Presence of metal ions like Ag, in the vicinity of Si nanoclusters enhances the luminescence due to localized surface plasmon resonance effect. The magnitude of stress has been calculated using Raman scattering method. © 2014 AIP Publishing LLC. |
| URI: | https://doi.org/10.1063/1.4866361 https://dspace.iiti.ac.in/handle/123456789/8542 |
| ISSN: | 0021-8979 |
| Type of Material: | Journal Article |
| Appears in Collections: | Department of Physics |
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