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https://dspace.iiti.ac.in/handle/123456789/6771
| Title: | Pulsed laser deposition of SiC thin films and influence of laser-assisted annealing |
| Authors: | Palani, Anand Iyamperumal |
| Issue Date: | 2019 |
| Publisher: | Elsevier Ltd |
| Citation: | Paneerselvam, E., Vasa, N. J., Nakamura, D., Palani, I. A., Higashihata, M., Ramachandra Rao, M. S., & Thomas, T. (2019). Pulsed laser deposition of SiC thin films and influence of laser-assisted annealing. Paper presented at the Materials Today: Proceedings, , 35 312-317. doi:10.1016/j.matpr.2020.01.535 |
| Abstract: | Silicon carbide (SiC) thin films were grown by pulsed laser deposition (PLD) on Si (1 0 0) substrates at a substrate temperature of 800 °C. Besides, laser annealing was performed on the post deposited intrinsic amorphous SiC films using Nd3+:YAG 355 nm laser in the Ar environment. The laser-annealed samples showed the crystalline characteristics. Crystalline characteristics of PLD grown, laser annealed samples were identified by X-ray diffraction (XRD), Raman analysis. Numerical analysis performed on SiC/Si interface to investigate the temperature distribution, to understand the mechanism of laser assisted annealing. © 2019 Elsevier Ltd. |
| URI: | https://doi.org/10.1016/j.matpr.2020.01.535 https://dspace.iiti.ac.in/handle/123456789/6771 |
| ISSN: | 2214-7853 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Mechanical Engineering |
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